vishay tlur640. document number 83171 rev. 1.7, 31-aug-04 vishay semiconductors www.vishay.com 1 19224 e2 pb pb-free universal led in ? 5 mm tinted diffused package features ? for dc and pulse operation luminous intensity categorized standard ? 5 mm (t-1?) package tlur64.. without stand-offs lead-free device applications general indicating and lighting purposes parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlur64.. part color, luminous intensity angle of half intensity ( ? ) technology TLUR6400 red, i v > 4 mcd 30 gaasp on gaas tlur6401 red, i v = (4 to 32) mcd 30 gaasp on gaas parameter test condition symbol value unit reverse voltage v r 6v dc forward current i f 20 ma surge forward current t p 10 si fsm 1a power dissipation t amb 65 c p v 60 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 500 k/w
www.vishay.com 2 document number 83171 rev. 1.7, 31-aug-04 vishay tlur640. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlur64.. 1) in one packing unit i vmin /i vmax 0.5 typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 10 ma TLUR6400 i v 415 mcd tlur6401 i v 41532mcd dominant wavelength i f = 10 ma d 630 nm peak wavelength i f = 10 ma p 640 nm angle of half intensity i f = 10 ma ? 30 deg forward voltage i f = 20 ma v f 23v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature 0 20 40 60 80 100 0 20406080100 t amb ? ambient temperature ( q c ) 17516 p ?power dissipation (mw) v 0 5 10 15 20 25 30 35 40 0 102030405060708090100 t amb ? ambient temperature ( q c ) 17515 i ?forward current ( ma ) f figure 3. pulse forward current vs. pulse duration figure 4. rel. luminous intens ity vs. angular displacement 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 9985 i - forward current ( ma ) f dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t amb <60 c 0.4 0.2 0 0.2 0.4 0.6 95 10042 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity vrel
vishay tlur640. document number 83171 rev. 1.7, 31-aug-04 vishay semiconductors www.vishay.com 3 figure 5. forward current vs. forward voltage figure 6. rel. luminous intensity vs. ambient temperature figure 7. relative luminous intensity vs. forward current 0.1 1 10 100 012345 v f - forward voltag e(v) 16634 f i - forward current ( ma ) red 0 0.4 0.8 1.2 1.6 95 10074 i - relative luminous intensity v rel i f =10ma t amb - ambient temperature ( c) 20 40 60 80 0 100 red i f - forward current ( ma ) 100 0.01 0.1 1 10 95 10076 i - relative luminous intensity v rel 10 1 figure 8. relative intensity vs. wavelength 0.0 0.2 0.4 0.6 0.8 1.0 1.2 550 590 630 670 710 750 17521 ? wavelength ( nm ) red i ? relative intensity rel
www.vishay.com 4 document number 83171 rev. 1.7, 31-aug-04 vishay tlur640. vishay semiconductors package dimensions in mm 95 10917
vishay tlur640. document number 83171 rev. 1.7, 31-aug-04 vishay semiconductors www.vishay.com 5 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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